收藏本站
Package Marking and Ordering Information
Device Marking
FDB2532
FDP2532
Device
FDB2532
FDP2532
Package
D 2 -PAK
TO-220
Reel Size
3 30 mm
T ube
Tape Width
24 mm
N/A
Quantity
800 units
50 units
Electrical Characteristics T C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
B VDSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0V
150
-
-
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V DS = 120V
V GS = 0V
V GS = ± 20V
T C = 150 o C
-
-
-
-
-
-
1
250
± 100
μ A
nA
On Characteristics
V GS(TH)
r DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V GS = V DS , I D = 250 μ A
I D = 33A, V GS = 10V
I D = 16A, V GS = 6V,
I D = 33A, V GS = 10V,
T C = 175 o C
2
-
-
-
-
0.014
0.016
0.040
4
0.016
0.024
0.048
V
?
Dynamic Characteristics
C ISS
C OSS
C RSS
Q g(TOT)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
V DS = 25V, V GS = 0V,
f = 1MHz
V GS = 0V to 10V
-
-
-
-
5870
615
135
82
-
-
-
107
pF
pF
pF
nC
Q g(TH)
Q gs
Q gs2
Q gd
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V GS = 0V to 2V
V DD = 75V
I D = 33A
I g = 1.0mA
-
-
-
-
11
23
13
19
14
-
-
-
nC
nC
nC
nC
Resistive Switching Characteristics (V GS = 10V)
t ON
t d(ON)
t r
t d(OFF)
t f
t OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V DD = 75V, I D = 33A
V GS = 10V, R GS = 3.6 ?
-
-
-
-
-
-
-
16
30
39
17
-
69
-
-
-
-
84
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V SD
t rr
Q RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge
I SD = 33A
I SD = 16A
I SD = 33A, dI SD /dt= 100A/ μ s
I SD = 33A, dI SD /dt= 100A/ μ s
-
-
-
-
-
-
-
-
1.25
1.0
105
327
V
V
ns
nC
Notes:
1: Starting T J = 25°C, L = 0.5 mH, I AS = 40A.
2: Pulse Width = 100s
? 2002 Fairchild Semiconductor Corporation
FDP2532 / FDB2532 Rev. C 2
2
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
568-0004-874F LED CBI 3MM 4X1 RED,YLW,GRN,GRN
CR6261-500-20 TRANSDCR AC 4-20MADC OUT 3PHASE
0638853300 MINI MAC APPLICATOR MYLAR TAPE
553-0213-400F LED CBI 3MM BI-LVL RED/YLW DIFF
553-0212-400F LED CBI 3MM BI-LVL RED/GRN DIFF
ASVMB-133.333MHZ-LY-T OSC MEMS 133.333 MHZ SMD
CR6261-150-50 TRANSDCR AC 4-20MADC OUT 3PHASE
0638852200 MINI MAC APPLICATOR MYLAR TAPE
相关代理商/技术参数
FDP2532_Q 功能描述:MOSFET 150V NCh UltraFET Power Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP2552 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP2552_12 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel PowerTrench?? MOSFET 150V, 37A, 36m??
FDP2552_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
FDP2552_Q 功能描述:MOSFET 150V N-Ch UltraFET Trench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP2570 功能描述:MOSFET TO-220 N-CH 150V 22A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP2570_Q 功能描述:MOSFET TO-220 N-CH 150V 22A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDP2572 功能描述:MOSFET TO-220 N-CH 150V 29A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube